schottky barrier diode features low forward current guard ring protected low diode capacitance. applications ultra high-speed switching voltage clamping protection circuits. blocking diodes. description planar schottky barrier diodes with an integrated guard ring for stress protection. leshan radio company, ltd. ordering information we declare that the material of product compliance with rohs requirements. 1 2 cathode anode s-lbas40bst5g sod882 1 2 device marking shipping u 8000/tape&reel lbas40bst5g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. u 5000/tape&reel u 10000/tape&reel lbas40bst1g s-lbas40bst1g lbas40bst3g s-lbas40bst3g lbas40bst5g s-lbas40bst5g rev.a 1/4
maximum ratings (t a = 25 c) parameter symbol min. max. unit conditions continuous reverse voltage v r - 40 v continuous forward current i f - 120 ma repetitive peak forward surge current i fsm - 120 ma t p <1s; <0.5 non-repetitive peak forward current i fsm - 200 ma t p <10ms storage temperature t stg -65 +150 c junction temperature t j - 150 c operating ambient temperature t amb -65 +150 c electrical characteristics( t a = 25 c ) parameter symbol max. unit conditions forward voltage(fig.1) v f 400 mv i f =1ma 560 mv i f =10ma 1v i f =40ma reverse current(fig.2 ; note1) i r 1 ? v r =30v 10 av r =40v diode capacitance(fig.4) c d 5 pf f=1mhz;v r =0 note: 1. pulse test:t p =300 s; =0.02. thermal characteristics parameter symbol v alue unit conditions thermal resistance from junction to ambient r th j-a 833 k/w note1 note 1. fr-4 minimum pad. leshan radio company, ltd. lbas40bst5g , s-lbas40bst5g rev.a 2/4
electrical characteristic curves(t a = 25 c) 10 2 10 1 10 - 1 10 -2 0 0.2 0.4 0.6 0.8 1.0 t amb =150 o c t amb =25 o c t amb = - 40 o c t amb =85 o c fig.1 forward current as a function of forward voltage; typical values. 10 3 10 2 10 1 10 - 1 10 -2 0 10 20 30 40 fig.2 reverse current as a function of reverse voltage; typical values. 5 4 3 2 1 0 0 10 20 30 40 fig.4 diode capacitance as a function of reverse voltage;typical values. 10 3 10 2 10 1 10 -1 1 10 10 2 fig.3 differential forward resistance as a function of forward current;typical values. t amb =25 o c t amb =85 o c t amb =150 o c f=10khz forward voltage: i f (ma) forward voltage: v f (v) forward voltage: i r ( a) forward voltage: v r (v) forward voltage: r diff ( ? ) forward voltage: c d (pf) forward voltage: i f (ma) forward voltage: v r (v) f=1mhz tamb=25 o c leshan radio company, ltd. rev.a 3/4 lbas40bst5g , s-lbas40bst5g
leshan radio company, ltd. rev.a 4/4 sod882 lbas40bst5g , s-lbas40bst5g unit:mm dimension outline:
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